HM51258P-8

The HM51258P-8 is designed as the 262,144 words by 1 bit static column dynamic random access memory utilizing the hitachi 2um CMOS process. This device has static column circuit and it is good for high performance main storage or for page access applications.

HM51258P-8 has twelve features. (1)262,144 words x 1bit SCRAM. (2)Double layer poly-si/policide process, high performance CMOS. (3)Power supply voltage 5V +/-10%. (4)row access time is 85ns and address access time is 40ns. (5)Ransom read&write cycle time is 155ns and static column cycle time is 45ns. (6)Lower power which would means 11mW for standby and 385mW for active. (7)Input and output TTL compatible. (8)Refresh 256 cycles/4ms. (9)Refresh functions RAS only refresh, CS before RAS refresh, hidden refresh. (10)Static column mode capability. (11)Edge triggered write capability. (12)Fast CS output control. Those are all the main features.

Some absolute maximum ratings of HM51258P-8 have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -1V to 7V. (2)Its supply voltage relative to Vss would be from -1V to 7V. (3)Its short circuit output current would be 50mA. (4)Its power dissipation would be 1.0W. (5)Its operating temperature range would be from 0°C to 70°C. (6)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of HM51258P-8 are concluded as follow. (1)Its operating current would be max 70mA. (2)Its standby current would be max 2mA. (3)Its refresh current would be max 70mA. (4)Its input leakage current would be min -10uA and max 10uA. (5)Its output leakage current would be min -10uA and max 10uA. And so on. If you have any question or suggestion or want to konw more information about this HM51258P-8 IC please contact us for more details. Thank you!