DescriptionThe HM5118165J-5 is designed as a CMOS dynamic RAM organized as 1,048,576-word x 16bit. It employs the most advanced 0.5um CMOS technology for high performance and low power. It offers extended data out (EDO) page mode as a high speed access mode.HM5118165J-5 has eight features. (1)Sing...
HM5118165J-5: DescriptionThe HM5118165J-5 is designed as a CMOS dynamic RAM organized as 1,048,576-word x 16bit. It employs the most advanced 0.5um CMOS technology for high performance and low power. It offers ex...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
The HM5118165J-5 is designed as a CMOS dynamic RAM organized as 1,048,576-word x 16bit. It employs the most advanced 0.5um CMOS technology for high performance and low power. It offers extended data out (EDO) page mode as a high speed access mode.
HM5118165J-5 has eight features. (1)Single 5V+/-10%. (2)High speed access time is max 50ns. (3)Low power dissipation. (4)EDO page mode capability. (5)1024 refresh cycles 16ms. (6)4 variations of refresh. (7)2CAS-byte control. (8)Battery backup operation (L-version). Those are all the main features.
Some absolute maximum ratings of HM5118165J-5 have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -1.0 to +7.0V. (2)Its supply voltage relative to Vss would be from -1.0 to +7.0V. (3)Its short circuit output current would be 50mA. (4)Its power dissipation would be 1.0W. (5)Its operating temperature range would be from 0°C to +70°C. (6)Its storage temperature range would be from -55°C to +125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of HM5118165J-5 are concluded as follow. (1)Its operating current would be max 200mA. (2)Its standby current would be max 2mA for TTL interface and would be max 1mA for CMOS interface. (3)Its standby current L-version would be max 150uA for CMOS interface. (4)Its RAS-only refresh current would be max 200mA. (5)Its standby current would be max 5mA. (6)Its CAS before RAS refresh current would be max 190mA. (7)Its EDO page mode current would be max 185mA. (8)Its battery backup current (standby with CBR refresh) would be max 500uA at trc=125us. (9)Its input leakage current would be min -10uA and max 10uA. (10)Its output leakage current would be min -10uA and max 10uA. (11)Its output high level voltage would be min 2.4V and max Vcc. (12)Its output low level voltage would be min 0V and max 0.4V. (12)Its input capacitance address would be max 5pF. (13)Its input capacitance clocks would be max 7pF. (14)Its output capacitance would be max 70pF. And so on. If you have any question or suggestion or want to know more information about HM5118165J-5, please contact us for details. Thank you!