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HM5118160B

Features: • Single 5 V (±10%)• High speed - Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation - Active mode: 935 mW/825 mW/715 mW (max) - Standby mode : 11 mW (max) : 0.83 mW (max) (L-version)• Fast page mode capability• Long refresh period - 1024 refresh cy...

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SeekIC No. : 004363335 Detail

HM5118160B: Features: • Single 5 V (±10%)• High speed - Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation - Active mode: 935 mW/825 mW/715 mW (max) - Standby mode : 11 mW (max) : 0.8...

HM5118160B Data Sheet

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Part Number:
HM5118160B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 5 V (±10%)
• High speed
   - Access time: 60 ns/70 ns/80 ns (max)
• Low power dissipation
   - Active mode: 935 mW/825 mW/715 mW (max)
   - Standby mode : 11 mW (max)
   : 0.83 mW (max) (L-version)
• Fast page mode capability
• Long refresh period
   - 1024 refresh cycles : 16 ms
   : 128 ms (L-version)
• 4 variations of refresh
   - RAS-only refresh
   - CAS-before-RAS refresh
   - Hidden refresh
   - Self refresh (L-version)
• 2CAS-byte control
• Battery backup operation (L-version)


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
1.0 to + 7.0
V
Supply voltage relative to VSS
VCC
1.0 to + 7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C



Description

The Hitachi HM5118160B is a CMOS dynamic RAM organized as 1,048,576-word×16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160B offers Fast Page Mode as a high speed access mode.




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