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HM5117805B

Features: ` Single 5 V (±10%)` High speed - Access time: 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode: 660mW/605 mW/550 mW(max) - Standby mode : 11 mW (max) : 0.83 mW (max) (L-version)` EDO page mode capability` Long refresh period - 2048 refresh cycles : 32 ms : 128 ms (L-version)...

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SeekIC No. : 004363331 Detail

HM5117805B: Features: ` Single 5 V (±10%)` High speed - Access time: 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode: 660mW/605 mW/550 mW(max) - Standby mode : 11 mW (max) : 0.83 mW (max) (L-versio...

HM5117805B Data Sheet

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Part Number:
HM5117805B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Single 5 V (±10%)
`  High speed
     -  Access time: 60 ns/70 ns/80 ns (max)
`  Low power dissipation
     - Active mode: 660mW/605 mW/550 mW(max)
     - Standby mode : 11 mW (max)
     : 0.83 mW (max) (L-version)
`  EDO page mode capability
`  Long refresh period
     - 2048 refresh cycles : 32 ms
     : 128 ms (L-version)
`  4 variations of refresh
     - RAS-only refresh
     - CAS-before-RAS refresh
     - Hidden refresh
     - Self refresh (L-version)
`  Battery backup operation (L-version)


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
1.0 to + 7.0
V
Supply voltage relative to VSS
VCC
1.0 to + 7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C



Description

The Hitachi HM5117805B is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. It offers Extended Data Out (EDO) Page Mode as a high speed access mode. Multiplexed address input permits the HM5117805B to be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.




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