Features: ` Single 5 V (±10%)` High speed` Access time: 50 ns/60 ns/70 ns (max)` Power dissipation - Active mode: 605 mW/550mW/495 mW (max) - Standby mode : 11 mW (max) :0.83 mW (max) (L-version)` Fast page mode capability` Long refresh period - 2048 refresh cycles : 32 ms : 128 ms (L-version)` 4 ...
HM5117800: Features: ` Single 5 V (±10%)` High speed` Access time: 50 ns/60 ns/70 ns (max)` Power dissipation - Active mode: 605 mW/550mW/495 mW (max) - Standby mode : 11 mW (max) :0.83 mW (max) (L-version)` F...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM5117800 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. It offers Fast Page Mode as a high speed access mode. Multiplexed address input permits the HM5117800 to be packaged in andard 28-pin plastic SOJ and 28-pin TSOP.