Features: ` Single 5 V (±10%)` High speed - Access time: 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode : 550mW/495 mW/440 mW (max) (HM5116405B Series) : 605mW/550 mW/495 mW (max) (HM5117405B Series) - Standby mode : 11 mW (max) :0.83 mW (max) (L-version)` EDO page mode capability` L...
HM5116405B: Features: ` Single 5 V (±10%)` High speed - Access time: 60 ns/70 ns/80 ns (max)` Low power dissipation - Active mode : 550mW/495 mW/440 mW (max) (HM5116405B Series) : 605mW/550 mW/495 mW (max) (HM5...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM5116405B Series, HM5117405B Series are CMOS dynamic RAMs organized 4,194,304- word× 4-bit. They employ the most advanced CMOS technology for high performance and low power. The HM5116405B Series, HM5117405B Series offer Extended Data Out (EDO) Page Mode as a high speed access mode.