Features: • Single 5 V (±10%)• High speed - Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation - Active mode: 550 mW/495 mW/440mW (max) - Standby mode : 11 mW (max) : 0.83 mW (max) (L-version)• Fast page mode capability• Long refresh period - 4096 refresh cyc...
HM5116160B: Features: • Single 5 V (±10%)• High speed - Access time: 60 ns/70 ns/80 ns (max)• Low power dissipation - Active mode: 550 mW/495 mW/440mW (max) - Standby mode : 11 mW (max) : 0.83...
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DescriptionThe HM511000A series is a kind of CMOS dynamic RAM organized 1048576-word*1-bit. It has...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to VSS |
VT |
1.0 to + 7.0 |
V |
Supply voltage relative to VSS |
VCC |
1.0 to + 7.0 |
V |
Short circuit output current |
Iout |
50 |
mA |
Power dissipation |
PT |
1.0 |
W |
Operating temperature |
Topr |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
The Hitachi HM5116160B is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced CMOS technology for high performance and low power.It offers Fast Page Mode as a high speed access mode.