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HM5116100B

Features: ` Single 5 V (±10%)` High speed - Access time: 60 ns/ 70 ns/ 80 ns (max)` Low power dissipation - Active mode: 40 mW/385 mW/358 mW (max) - Standby mode 11 mW (max)` Fast page mode capability` Long refresh period - 4096 refresh cycles : 64 ms` 3 variations of refresh - RAS -only refresh -...

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SeekIC No. : 004363312 Detail

HM5116100B: Features: ` Single 5 V (±10%)` High speed - Access time: 60 ns/ 70 ns/ 80 ns (max)` Low power dissipation - Active mode: 40 mW/385 mW/358 mW (max) - Standby mode 11 mW (max)` Fast page mode capabili...

HM5116100B Data Sheet

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Part Number:
HM5116100B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

`  Single 5 V (±10%)
`  High speed
     - Access time: 60 ns/ 70 ns/ 80 ns (max)
`  Low power dissipation
     - Active mode: 40 mW/385 mW/358 mW (max)
     - Standby mode 11 mW (max)
`  Fast page mode capability
`  Long refresh period
     - 4096 refresh cycles : 64 ms
`  3 variations of refresh
     - RAS -only refresh
     - CAS -before- RAS refresh
     - Hidden refresh
`  Test function
     - 16-bit parallel test mode


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
1.0 to + 7.0
V
Supply voltage relative to VSS
VCC
1.0 to + 7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C



Description

The Hitachi HM5116100B is a CMOS dynamic RAM organized 16,777,216-word ×1-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5116100B offers Fast Page Mode as a high speed access mode.


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