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HM5112805F-6

Features: ` Single 3.3 V supply: 3.3 V ± 0.3 V` Access time: 60 ns (max)` Power dissipation-Active: 720 mW (max) (HM5112805F) 792 mW (max) (HM5113805F)- Standby : 3.6 mW (max) (CMOS interface) : 1.8 mW (max) (CMOS interface) (L-version)` EDO page mode capability` Refresh cycles - RAS-only refresh ...

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SeekIC No. : 004363306 Detail

HM5112805F-6: Features: ` Single 3.3 V supply: 3.3 V ± 0.3 V` Access time: 60 ns (max)` Power dissipation-Active: 720 mW (max) (HM5112805F) 792 mW (max) (HM5113805F)- Standby : 3.6 mW (max) (CMOS interface) : 1.8...

HM5112805F-6 Data Sheet

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Part Number:
HM5112805F-6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  Single 3.3 V supply: 3.3 V ± 0.3 V
`  Access time: 60 ns (max)
`  Power dissipation
-Active: 720 mW (max) (HM5112805F) 792 mW (max) (HM5113805F)
- Standby : 3.6 mW (max) (CMOS interface) : 1.8 mW (max) (CMOS interface) (L-version)
`  EDO page mode capability
`  Refresh cycles - RAS-only refresh 8192 cycles/64 ms (HM5112805F) 4096 cycles/64 ms (HM5113805F)
- CBR/Hidden refresh
4096 cycles/64 ms (HM5112805F, HM5113805F)


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Terminal voltage on any pin relative to VSS
VT
0.5 to VCC + 0.5 (£ 4.6 V (max))
V
Power supply voltage relative to VSS
VCC
0.5 to +4.6
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Storage temperature
Tstg
55 to +125
°C



Description

The Hitachi HM5112805F, HM5113805F are 128M-bit dynamic RAMs organized as 16,777,216-word ´ 8-bit. They have realized high performance and low power by employing CMOS process technology. HM5112805F, HM5113805F offer Extended Data Out (EDO) Page Mode as a high speed access mode. HM5112805F, HM5113805F are packaged in 32-pin plastic TSOPII.




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