Features: ` Long wavelength output: p = 1550 nm Typ.` High extinction ratio: 13 dB Min. at VR(EA) = 2 V` Fast pulse response: tr/tf 80 ps` Dynamic single longitudinal mode: Sr = 40 dB Typ.` Package: open air package (chip on carrier) with micro strip-lineSpecifications Item Symbol Value Un...
HL1566AF: Features: ` Long wavelength output: p = 1550 nm Typ.` High extinction ratio: 13 dB Min. at VR(EA) = 2 V` Fast pulse response: tr/tf 80 ps` Dynamic single longitudinal mode: Sr = 40 dB Typ.` Package:...
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Item | Symbol | Value | Unit |
LD forward current | IF | 100 | mA |
Laser diode reverse voltage | VR (LD) | 2 | V |
Modulator reverse voltagee | VR(EA) | -5 | V |
Operating temperature | Topr | 10 to +40 | |
Storage temperature | Tstg | -40 to 85 |
Note: 1. without condensation
The HL1566AF is a 1.55 m InGaAsP distributed-feedback laser diode (DFB-LD) with a multiquantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. HL1566AF is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps external modulation systems for up to 600 km.