HI13003

The HI13003 is a kind of NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP. It is designed for high-voltage,high-speed power switching inductive circuits where all time is critical. It can be used in switching regulators,inverters,motor controls,solenoid/relay drivers and deflection circuits. HI13003 is available in the TO-251 package.

The following is the description about its absolute maximum ratings of HI13003 at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 40 W when TC is 25 and is 1.3 W when TA is 25 ; (3): collector to base voltage(VCBO) is 700 V and collector to emitter voltage(VCEO) is 400 V,emitter to base voltage(VEBO) is 9 V; (4): IC collector current for DC is 1.5 A ; (5): the minimum BVCBO is 400 V when IC is 10 mA; (6): the minimum BVCEO is 700 V when IC is 1 mA and VEB is 1.5 V; (7): the maximum ICBO is 1 mA when VCE is 9 V and IE is 0,the ICEV is 1 mA at VCE is 700 V and VBE is 1.5 V; (8): the maximum VCE(sat) is 0.5 V at the condition of IC is 0.5 A and IB is 0.1 A;

If you want to know more information about the HI13003 ,please download the datasheet at www.seekic.com.