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HGTG30N120CN

Features: • 75A, 1200V, TC= 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ= 150• Short Circuit Rating• Low Conduction Loss• Avalanche Rated•Thermal ImpedanceSPICE ModelTemperature CompensatingSABER™ M...

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SeekIC No. : 004362161 Detail

HGTG30N120CN: Features: • 75A, 1200V, TC= 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ= 150• Short Circuit Rating• Low Conduction ...

HGTG30N120CN Data Sheet

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Part Number:
HGTG30N120CN
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 75A, 1200V, TC= 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ= 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•Thermal Impedance
SPICE Model
Temperature Compensating
SABER™ Model


Specifications

  HGTG30N120CN UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . .. . . . . . .BVCES
Collector Current Continuous
At TC= 25 . . . . . .. .. . . . . . . . . . . . . . . . IC25
At TC= 110oC . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . .. . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . .. .VGEM
Switching Safe Operating Area at TJ= 150oC (Figure 2) . . . . . . . . . .. . . . . . . SSOA
Power Dissipation Total at TC= 25 . . . . . . . . . . . . . .. . . . .. . . . .. . . . PD
Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 3) at VGE= 15V . . . . . . . . . . . . . . . . . . . .tS
Short Circuit Withstand Time (Note 3) at V= 12V . . . . . . . . . . . . . . . .. . . . .tSC		 1200
75
40
240
±
20
±
30
150A at 1200V
500
4.0
135
55 to 150
260
8
15		 V
A
A
A
V
V
W
W/
mJ
o
C
o
C




Description

The HGTG30N120CN is a Non-PunchT hrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTG30N120CN has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The HGTG30N120CN IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49281.




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