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HGTG24N60D1D

Features: • 24A, 600V• Latch Free Operation• Typical Fall Time <500ns• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60nsPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV...

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SeekIC No. : 004362160 Detail

HGTG24N60D1D: Features: • 24A, 600V• Latch Free Operation• Typical Fall Time <500ns• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60nsPinoutSpecificationsCollecto...

HGTG24N60D1D Data Sheet

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Part Number:
HGTG24N60D1D
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
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Product Details

Description



Features:

• 24A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns


Pinout

Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  BVCES 600 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  BVCGR 600 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 40 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 24 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ICM 96 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGES ±25 V
Switching Safe Operating Area at TJ = +150. . . . . . . . . . . . . . . . SSOA 60A at 0.8 BVCES
Diode Forward Current at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..IF25 40 A
Diode Forward Current at TC = +90. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  IF90 24 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 125 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1.0 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . .TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260


Description

The  HGTG24N60D1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG24N60D1D  has the high input impedance of MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The diode used parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.

The HGTG24N60D1D IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.




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