Features: • 24A, 600V• Latch Free Operation• Typical Fall Time <500ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 VCollector-Gat...
HGTG24N60D1: Features: • 24A, 600V• Latch Free Operation• Typical Fall Time <500ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Voltage . . . ....
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
The HGTG24N60D1 IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.
HGTG24N60D1IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.