HGTG20N60B3D

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 20 A
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : TO-247-3
Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 165 W


Features:

• 40A, 600V at T_C = 25
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Specifications

                                                                                                              HGTG20N60B3D    UNITS
Collector to Emitter Voltage........................................................ BV_CES             600              V
Collector to Gate Voltage, R_GE = 1MΩ..........................................BV_CGR             600              V
   Collector Current Continuous...................................................... I_C25              40               A
   At T_C = 110o............................................................................I_C110              20               A
Average Diode Forward Current at 110..................................... I_(AVG)             20               A
Collector Current Pulsed (Note 1) .................................................... I_CM           160               A
Gate to Emitter Voltage Continuous.................................................V_GES           ±20              V
Gate to Emitter Voltage Pulsed ...................................................... V_GEM           ±30              V
Switching Safe Operating Area at T_C = 150 ............................... SSOA        30A at 600        V
Power Dissipation Total at T_C = 25...................................................P_D            165              W
Power Dissipation Derating T_C > 25 ............................................                      1.32       W/
Operating and Storage Junction Temperature Range..................T_J, T_STG        -40 to 150       
Maximum Lead Temperature for Soldering ..........................................T_L               260            
Short Circuit Withstand Time (Note 2) at V_GE = .................................t_SC                 4             µs
Short Circuit Withstand Time (Note 2) at V_GE = 10V...........................t_SC                10            µs

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VC_E = 360V, TC = 125 , R_G = 25Ω.


Description

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N60B3D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The diode used in anti-parallel with the IGBT is the RHRP3060.

The HGTG20N60B3D IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly developmental type TA49016.

Parameters:

Technical/Catalog Information	HGTG20N60B3D
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Power - Max	165W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGTG20N60B3D HGTG20N60B3D