HGTG20N60A4D

IGBT Transistors 600V

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HGTG20N60A4D: IGBT Transistors 600V

floor Price/Ceiling Price

US $ 2.67~3.61 / Piece | Get Latest Price
Part Number:
HGTG20N60A4D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $3.61
  • $3.26
  • $2.96
  • $2.67
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.8 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 70 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 290 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Continuous Collector Current at 25 C : 70 A
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Power Dissipation : 290 W


Specifications

      

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
HGTG20N60A4DFull ProductionRoHS Compliant$5.38TO-2473RAIL N/ALine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: 20N60A4D
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG20N60A4D is available. Click here for more information .



Description

The HGTG20N60A4D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolartransistors. This HGTG20N60A4D  has the high input impedance of aMOSFET and the low on-state conduction loss of a bipolartransistor. The much lower on-state voltage drop varies onlymoderately between 25oC and 150oC. The IGBT used is thedevelopment type TA49339. The diode used in anti-parallelis the development type TA49372.

This HGTG20N60A4D IGBT is ideal for many high voltage switchingapplications operating at high frequencies where lowconduction losses are essential. This device has beenoptimized for high frequency switch mode powersupplies.Formerly Developmental Type TA49341.




Parameters:

Technical/Catalog InformationHGTG20N60A4D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A
Power - Max290W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTG20N60A4D
HGTG20N60A4D



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