IGBT Transistors 600V N-Channel IGBT SMPS Series
HGTG20N60A4: IGBT Transistors 600V N-Channel IGBT SMPS Series
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.8 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 70 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 290 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTG20N50C1D devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.
This HGTG20N50C1D IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339.
Technical/Catalog Information | HGTG20N60A4 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 70A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
Power - Max | 290W |
Mounting Type | Through Hole |
Package / Case | TO-247 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTG20N60A4 HGTG20N60A4 |