Features: • 20A, 500V• Latch Free Operation• Typical Fall Time < 500ns• High Input Impedance• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60nsPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ....
HGTG20N50C1D: Features: • 20A, 500V• Latch Free Operation• Typical Fall Time < 500ns• High Input Impedance• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60n...
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
The HGTG20N50C1D IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N50C1D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. HGTG20N50C1D IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors.