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HGTG20N120E2

Features: • 34A, 1200V• Latch Free Operation• Typical Fall Time - 780ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 VCollector-Gate Breakdown Vo...

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SeekIC No. : 004362155 Detail

HGTG20N120E2: Features: • 34A, 1200V• Latch Free Operation• Typical Fall Time - 780ns• High Input Impedance• Low Conduction LossPinoutSpecificationsCollector-Emitter Breakdown Voltag...

HGTG20N120E2 Data Sheet

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Part Number:
HGTG20N120E2
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss


Pinout

Connection Diagram


Specifications

Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  BVCES 1200 V
Collector-Gate Breakdown Voltage RGE = 1MW. . . . . . . . . . . . . . . . . . . . . .  BVCGR 1200 V
Collector Current Continuous At TC = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 34 A
Collector Current Continuous At TC = +90. . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 20A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 100 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGEM ±30 V
Switching SOA at TC = +150 . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 0.8 BVCES
Power Dissipation Total at TC = +25o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 150 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.20 W/
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 3 s
At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  tSC 15 s


Description

The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG20N120E2 has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25 and +150.

HGTG20N120E2 IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.  The development type number for this device is TA49009.




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