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HGTG20N120CND

Features: • 63A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150• Short Circuit Rating• Low Conduction LossPinoutSpecificationsCollector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . ....

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SeekIC No. : 004362154 Detail

HGTG20N120CND: Features: • 63A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150• Short Circuit Rating• Low Conductio...

HGTG20N120CND Data Sheet

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Part Number:
HGTG20N120CND
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5000

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Product Details

Description



Features:

• 63A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 V
Collector Current Continuous At TC = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . .    IC25 63 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 2) . . . . . . . . . . . .SSOA 100A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  PD 390 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . .TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 µs
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . tSC 15 µs


Description

The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This HGTG20N120CND has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The HGTG20N120CND IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49305.




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