Position: Home  > All Categories> Integrated Circuits (ICs) > HGTG20N120C3D

HGTG20N120C3D

Features: • 45A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150• Short Circuit Rating• Low Conduction LossSpecifications HGTG20N120C3DUNITSCollector to Emitter Voltage...................................

product image

HGTG20N120C3D Picture
See larger image
SeekIC No. : 004362152 Detail

HGTG20N120C3D: Features: • 45A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150• Short Circuit Rating• Low Conductio...

HGTG20N120C3D Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HGTG20N120C3D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/9/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 45A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 300ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss


Specifications

                                                                                                                        HGTG20N120C3D     UNITS
Collector to Emitter Voltage..................................................................BVCES          1200                    V
Collector Current Continuous
    At TC = 25 ....................................................................................... IC25             45                     A
    At TC = 110......................................................................................IC110            20                     A
Collector Current Pulsed (Note 1) .............................................................ICM           160                    A
Gate to Emitter Voltage Continuous.........................................................VGES           ±20                   V
Gate to Emitter Voltage Pulsed .............................................................. VGEM           ±30                   V
Switching Safe Operating Area at TJ = 150, Figure 2................SSOA 20A at           1200                  V
Power Dissipation Total at TC = 25...........................................................PD            208                   W
Power Dissipation Derating TC > 25.......................................................                  1.67               W/
Reverse Voltage Avalanche Energy .........................................................EARV            100                   mJ
Operating and Storage Junction Temperature Range ........................TJ, TSTG           -40 to 150           
Maximum Lead Temperature for Soldering ..................................................TL              260                  
Short Circuit Withstand Time (Note 2) at VGE = 15V.................................. tSC                8                   ms
Short Circuit Withstand Time (Note 2) at VGE = 12V.................................. tSC               15                  ms

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to
                 the device. This is a stress only rating and operation of the device at these or any other
                 conditions  above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 720V, TJ = 125, RGE = 3W.


Description

The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This HGTG20N120C3D  has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The  HGTG20N120C3D IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.The diode used in anti-parallel with the IGBT was formerly developmental type TA49155. The IGBT diode combination was formerly developmental type TA49264.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Prototyping Products
AVT4168
DE1
Optical Inspection Equipment
AA924
A21K4B
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
LED Products
LM24P20
KCG057QV1DB-G770
View more