IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
HGTG18N120BND: IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde
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Features: • 35A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Ti...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V | ||
Collector-Emitter Saturation Voltage : | 2.45 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 54 A | Gate-Emitter Leakage Current : | +/- 250 nA | ||
Power Dissipation : | 390 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design. HGTG18N120BND is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The HGTG18N120BND IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49304.
Technical/Catalog Information | HGTG18N120BND |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 54A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 18A |
Power - Max | 390W |
Mounting Type | Through Hole |
Package / Case | TO-247 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HGTG18N120BND HGTG18N120BND |