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HGTG15N120C3D

Features: • 35A, 1200V at TC = 25• 1200V Switching SOA Capability• Typical Fall Time at TJ = 150 . . . . . . . . . . . . . . 350ns• Short Circuit Rating• Low Conduction LossPinoutSpecificationsCollector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . ...

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SeekIC No. : 004362150 Detail

HGTG15N120C3D: Features: • 35A, 1200V at TC = 25• 1200V Switching SOA Capability• Typical Fall Time at TJ = 150 . . . . . . . . . . . . . . 350ns• Short Circuit Rating• Low Conduction...

HGTG15N120C3D Data Sheet

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Part Number:
HGTG15N120C3D
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

• 35A, 1200V at TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time at TJ = 150 . . . . . . . . . . . . . . 350ns
• Short Circuit Rating
• Low Conduction Loss


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   IC25 35 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 15 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 120 A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150, Figure 14 . . . . . . . . . . . . ..SSOA 15A at 1200V
Power Dissipation Total at TC = 25o . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  PD 164 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . .  TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 6 s
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . tSC 25 s


Description

The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. HGTG15N120C3D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The HGTG15N120C3D IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.The diode used in anti-Parallel with the IGBT is the same as the RHRP15120. The IGBT was formerly development type TA49145.




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