HGTG12N60D1D

Features: • 12A, 600V• Latch Free Operation• Typical Fall Time <500ns• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60nsPinoutSpecificationsCollector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 VC...

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SeekIC No. : 004362148 Detail

HGTG12N60D1D: Features: • 12A, 600V• Latch Free Operation• Typical Fall Time <500ns• Low Conduction Loss• With Anti-Parallel Diode• tRR < 60nsPinoutSpecificationsCollecto...

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Part Number:
HGTG12N60D1D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/25

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Product Details

Description



Features:

• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns



Pinout

  Connection Diagram


Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR 600 V
Collector Current Continuous at TC = +25. . . . . . . . . . . . . . . . . . . . . . . .IC25 21 A
at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 48 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Switching Safe Operating Area at TJ = +150 . . . . . . . . . . . SSOA 30A at 0.8 BVCES
Diode Forward Current at TC = +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 21 A
at TC = +90. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF90 12 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . .  TL 260



Description

The HGTG12N60D1D  IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGTG12N60D1D has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic.

The HGTG12N60D1D  IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.


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