HGTG12N60A4D

IGBT Transistors 600V N-Channel IGBT SMPS Series

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SeekIC No. : 00142398 Detail

HGTG12N60A4D: IGBT Transistors 600V N-Channel IGBT SMPS Series

floor Price/Ceiling Price

US $ 1.81~2.44 / Piece | Get Latest Price
Part Number:
HGTG12N60A4D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.44
  • $2.2
  • $2
  • $1.81
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 54 A Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 167 W Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Power Dissipation : 167 W
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-247-3
Continuous Collector Current at 25 C : 54 A


Features:

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards





Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
HGTG12N60A4D Full Production RoHS Compliant $3.64 TO-247 3 RAIL TBD Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: 12N60A4D
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product HGTG12N60A4D is available. Click here for more information .





Description

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switchingdevices combining the best features of MOSFETs andbipolar transistors. These HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS devices have the high inputimpedance of a MOSFET and the low on-state conductionloss of a bipolar transistor. The much lower on-state voltagedrop varies only moderately between 25 o C and 150 o C. TheIGBT used is the development type TA49335. The diodeused in anti-parallel is the development type TA49371.This IGBT is ideal for many high voltage switchingapplications operating at high frequencies where lowconduction losses are essential. This device has beenoptimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337.






Parameters:

Technical/Catalog InformationHGTG12N60A4D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)54A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max167W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HGTG12N60A4D
HGTG12N60A4D



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