HGT1Y40N60B3D

• 70A, 600V, T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . 100ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss

CAUTION: Stresses above those listed in ''Absolute Maximum Ratings'' may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Pulse width limited by maximum junction temperature.
2. V_CE(PK) = 360V, T_J = 125, R_G = 3.

The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The HGT1Y40N60B3D device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49052. The diode used in anti-parallel with the IGBT is the development type TA49063.

The HGT1Y40N60B3D IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49365.