HGT1S7N60C3D

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3


Features:

• 14A, 600V at T_C = 25
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T_J = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Pinout




Specifications

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES 600 V
Collector Current Continuous
At T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25 14 A
At T_C = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C110 7 A
Average Diode Forward Current at 110o . . . . . . . . . . . . . . . . . . . . . . . . . . I_(AVG) 8 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM 56 A
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±20 V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±30 V
Switching Safe Operating Area at T_J = 150, Figure 14 . . . . . . . . . . SSOA 40A at 480V
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 60 W
Power Dissipation Derating T_C > 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/
Operating and Storage Junction Temperature Range . . . . . . . . . T_J, T_STG -40 to 150
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 260
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . .t_SC 1 ms
Short Circuit Withstand Time (Note 2) at V_GE = 10V . . . . . . . . . . . . . . . . . . . . .t_SC 8 ms


Description

The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS   devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25.and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.

The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.