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HGT1S5N120CNS

Features: • 25A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150• Short Circuit Rating• Low Conduction Loss• Avalanche Rated• Temperature Compensating SABER™ Model Thermal Impedance S...

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SeekIC No. : 004362117 Detail

HGT1S5N120CNS: Features: • 25A, 1200V, TC = 25• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150• Short Circuit Rating• Low Conductio...

HGT1S5N120CNS Data Sheet

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Part Number:
HGT1S5N120CNS
Supply Ability:
5000

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Product Details

Description



Features:

• 25A, 1200V, TC = 25
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
  Thermal Impedance SPICE Model
  www.intersil.com
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
  Components to PC Boards"


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 25 A
Collector Current Continuous At TC = 110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ICM 40 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . SSOA 30A at 1200V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 167 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/
Forward Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. EAV 36 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .  TJ, TSTG -55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  TL 300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . .  .tSC 8 µs
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs


Description

The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through (NPT) IGBT designs. HGTP5N120CN and HGT1S5N120CNS  are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The HGTP5N120CN and HGT1S5N120CNS  IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49309.




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