Features: • 21A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC• Short Circuit Rating• Low Conduction Loss• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.inte...
HGT1S5N120BNDS: Features: • 21A, 1200V, TC = 25oC• 1200V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC• Short Circuit Rating• Low Condu...
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SYMBOL |
PARAMETERS |
RATING |
UNITS |
B VCES I C25 I C110 ICM V GES V GEM S SOA P D T STG TL Tpkg t SC tSC |
Collector to Emitter Voltage Collector Current Continuous At TC = 25oC At TC = 110oC Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150oC (Figure Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s Package Body for 10s, see Tech Brief 334 Short Circuit Withstand Time (Note 2) at VGE = 15V. Short Circuit Withstand Time (Note 2) at VGE = 12V. |
1200 21 10 40 ±20 ±30 30A at 1200V 167 1.33 -55 to 150 300 260 8 15 |
V A A A V V W W/o C o C o C o C µs µs |
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308.
The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49306.