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HGT1S3N60C3DS

Features: • 6A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150• Short Circuit Rating• Low Conduction Loss• Hyperfast Anti-Parallel DiodePinoutSpecificationsCollector to Emitter Voltage . . . . ....

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SeekIC No. : 004362113 Detail

HGT1S3N60C3DS: Features: • 6A, 600V at TC = 25• 600V Switching SOA Capability• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150• Short Circuit Rating• Low Conduction...

HGT1S3N60C3DS Data Sheet

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Part Number:
HGT1S3N60C3DS
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/10/18

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Product Details

Description



Features:

• 6A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at TJ = 150
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode


Pinout

Connection Diagram


Specifications

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .BVCES 600 V
Collector Current Continuous At TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 6 A
Collector Current Continuous At TC = 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. IC110 3 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ICM 24 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150 (Figure 14) . . . . . . . . . . . . . . .. SSOA 18A at 480V
Power Dissipation Total at TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD 33 W
Power Dissipation Derating TC > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . .  TJ, TSTG -40 to 150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  TL 260
Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . .tSC 8 µs


Description

The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055.

The HGTP3N60C3D, and HGT1S3N60C3DS IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49119.




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