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SeekIC No. : 00143877 Detail

HGT1S3N60A4DS9A: IGBT Transistors 600V N-Channel IGBT SMPS Series

HGT1S3N60A4DS9A Data Sheet

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Part Number:: HGT1S3N60A4DS9A
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	2 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	17 A	Gate-Emitter Leakage Current :	+/- 250 nA
Power Dissipation :	70 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-263AB-3	Packaging :	Reel

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2 V
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-263AB-3
Continuous Collector Current at 25 C : 17 A
Power Dissipation : 70 W

Parameters:

Technical/Catalog Information	HGT1S3N60A4DS9A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	17A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 3A
Power - Max	70W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGT1S3N60A4DS9A HGT1S3N60A4DS9A

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HGT1S3N60A4DS9A

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