HGT1S20N35G3VLS

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 20 A
Power Dissipation : 150 W
Gate-Emitter Leakage Current : +/- 250 nA
Package / Case : TO-263AB-3
Collector-Emitter Saturation Voltage : 1.3 V
Maximum Gate Emitter Voltage : +/- 10 V
Collector- Emitter Voltage VCEO Max : 375 V


Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Ignition Energy Capable


Pinout




Specifications

Collector-Emitter Bkdn Voltage At 10mA, R_GE = 1kΩ. . . . . . . . . . . . . . . . . . . . . BV_CER 375 V
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  BV_ECS 24 V
Collector Current Continuous At VGE = 5.0V, T_C = +25, Figure 7 . . . . . . . . . . . .I_C25 20 A
Collector Current Continuous At VGE = 5.0V, T_C = +100 . . . . . . . . . . . . . . . . . I_C100 20 A
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES ±10 V
Inductive Switching Current At L = 2.3mH, T_C = +25 . . . . . . . . . . . . . . . . . . .   I_SCIS 26 A
Inductive Switching Current At L = 2.3mH, T_C = +17 . . . . . . . . . . . . . . . . . . . . I_SCIS 18 A
Collector to Emitter Avalanche Energy At L = 2.3mH, T_C = +25 . . . . . . . . . . .  E_AS 775 mJ
Power Dissipation Total At T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 150 W
Power Dissipation Derating T_C > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.0 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . T_J, T_STG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  T_L 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..ESD 6 KV


Description

This HGT1S20N35G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGT1S20N35G3VLS include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.