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HGT1S20N35G3VL

Features: • Logic Level Gate Drive• Internal Voltage Clamp• ESD Gate Protection• TJ = 175• Ignition Energy CapablePinoutSpecificationsCollector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ. . . . . . . . . . . . . . . . . . . . . BVCER 375 VEmitter-Collector Bkdn Vol...

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SeekIC No. : 004362100 Detail

HGT1S20N35G3VL: Features: • Logic Level Gate Drive• Internal Voltage Clamp• ESD Gate Protection• TJ = 175• Ignition Energy CapablePinoutSpecificationsCollector-Emitter Bkdn Voltage At ...

HGT1S20N35G3VL Data Sheet

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Part Number:
HGT1S20N35G3VL
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175
• Ignition Energy Capable


Pinout

Connection Diagram


Specifications

Collector-Emitter Bkdn Voltage At 10mA, RGE = 1kΩ. . . . . . . . . . . . . . . . . . . . . BVCER 375 V
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  BVECS 24 V
Collector Current Continuous At VGE = 5.0V, TC = +25, Figure 7 . . . . . . . . . . . .IC25 20 A
Collector Current Continuous At VGE = 5.0V, TC = +100 . . . . . . . . . . . . . . . . . IC100 20 A
Gate-Emitter-Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±10 V
Inductive Switching Current At L = 2.3mH, TC = +25 . . . . . . . . . . . . . . . . . . .   ISCIS 26 A
Inductive Switching Current At L = 2.3mH, TC = +17 . . . . . . . . . . . . . . . . . . . . ISCIS 18 A
Collector to Emitter Avalanche Energy At L = 2.3mH, TC = +25 . . . . . . . . . . .  EAS 775 mJ
Power Dissipation Total At TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.0 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  TL 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..ESD 6 KV


Description

This HGT1S20N35G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGT1S20N35G3VL include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.




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