HGT1S14N41G3VLS

Features:

• Ignition Energy = 340mJ at T_{J (STARTING)} = 25
• Typical Internal Clamp Voltage = 410V at T_J = 25
• Logic Level Gate Drive
• ESD Gate Protection
• T_J = 175
• Internal Series and Shunt Gate Resistors
• 24V Reverse Battery Capability
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

                                                                                                                               HGT1S14N41G3VLS,
                                                                                                                                 HGTP14N41G3VL       UNITS
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CER        430                      V
Collector to Emitter Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CES         445                      V
Emitter to Collector Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_ECS          24                       V
Collector Current Continuous at V_GE = 5V, T_C = 25 . . . . . . . . . . . . . . . . . . .I_C25             25                       A
                                               at V_GE = 5V, T_C = 110 . . . . . . . . . . . . . . . . . .I_C110           18                       A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GEM         ±10                      V
Inductive Switching Current at L = 3 mH, T_C = 25 . . . . . . . . . . . . . . . . . . . . I_SCIS           15                       A
                                             at L = 3 mH, T_C = 150. . . . . . . . . . . . . . . . . . . .I_SCIS         11.5                      A
Collector to Emitter Avalanche Energy at L = 3 mH, T_C = 25 . . . . . . . . . . . . .E_AS            340                      mJ
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D             136                      W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                 0.91                   W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_STG      -55 to 175                
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J          -55 to 175                
Electrostatic Discharge Voltage HBM at 250pF, 1500 All Pin Configurations . . E_SD            5                         kV
Electrostatic Discharge Voltage MM at 200pF, 0 All Pin Configurations . . . . . . E_SD            2                         kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . T_L             300                      
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_PKG         260                       

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 

NOTE:
1. May be exceeded if I_GEM is limited to 10mA.

Description

This HGT1S14N41G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features of HGT1S14N41G3VLS  include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. Formerly Developmental Type TA49360.