HGT1S14N40F3VLS

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Package / Case : TO-263AB-3
Collector-Emitter Saturation Voltage : 1.3 V
Maximum Gate Emitter Voltage : +/- 10 V
Collector- Emitter Voltage VCEO Max : 420 V
Continuous Collector Current at 25 C : 38 A
Gate-Emitter Leakage Current : 10 uA
Power Dissipation : 262 W


Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• Max T_J = 175
• SCIS Energy = 330mJ at T_J = 25


Application

• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications


Pinout




Specifications

Symbol	Parameter	Ratings	Units
BVCES	Collector to Emitter Breakdown Voltage (IC = 1 mA)	420	V
BVCGR	Collector to Gate Breakdown Voltage (RGE = 10KΩ)	420	V
ESCIS25	Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C	330	mJ
IC25	Collector Current Continuous, at TC = 25°C, VGE = 4.5V	38	A
IC90	Collector Current Continuous, at TC = 90°C, VGE = 4.5V	35	A
VGES	Gate to Emitter Voltage Continuous	±10	V
VGEM	Gate to Emitter Voltage Pulsed	±12	V
ICO	L = 2.3mHy, TC = 25°C	17	A
ICO	L = 2.3mHy, TC = 150°C	12	A
PD	Power Dissipation Total TC = 25°C	262	W
	Power Dissipation Derating TC > 25°C	1.75	W/°C
TJ, TSTG	Operating and Storage Junction Temperature Range	40 to 175	°C
TL	Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)	300	°C
Tpkg	Max Lead Temp for Soldering (Package Body for 10s)	260	°C
ESD	Electrostatic Discharge Voltage at 100pF, 1500Ω	3	KV

Description

This HGT1S14N40F3VLS  N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the drain and the gate and ESD protection for the logic level gate. Some specifications of HGT1S14N40F3VLS are unique to this automotive application and are intended to assure device survival in this harsh environment.Formerly Developmental Type 49023