HGT1S14N37G3VLS

Collector-Emitter Saturation Voltage :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Continuous Collector Current at 25 C : 25 A
Package / Case : TO-263AB-3
Collector- Emitter Voltage VCEO Max : 380 V
Maximum Gate Emitter Voltage : +/- 10 V
Gate-Emitter Leakage Current : 40 uA
Power Dissipation : 136 W


Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Internal Series and Shunt Gate Resistors
• Low Conduction Loss
• Ignition Energy Capable


Pinout




Specifications

Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . .BV_CER 380 V
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . .BV_ECS 24 V
Collector Current Continuous at V_GE = 5V, T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . .I_C25 25 A
Collector Current Continuous at V_GE = 5V, T_C = 110 . . . . . . . . . . . . . . . . . . . . . .I_C110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±10 V
Inductive Switching Current at L = 3mH, T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . I_SCIS 15 A
Inductive Switching Current at L = 3mH, T _C = 150. . . . . . . . . . . . . . . . . . . . . . I_SCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, T_C = 25 . . . . . . . . . . . . . . .  E_AS 340 mJ
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 136 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_STG -55 to 175
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J -55 to 175
Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . E_SD 5 kV
Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . E_SD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. T_PKG 260



Description

This HGT1S14N37G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes of HGT1S14N37G3VLS provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.Formerly Developmental Type TA49169.