HGT1S14N36G3VLS

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Gate-Emitter Leakage Current : +/- 250 nA
Power Dissipation : 100 W
Package / Case : TO-263AB-3
Continuous Collector Current at 25 C : 18 A
Maximum Gate Emitter Voltage : +/- 10 V
Collector- Emitter Voltage VCEO Max : 24 V
Collector-Emitter Saturation Voltage : 1.25 V


Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Ignition Energy Capable


Pinout




Specifications

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CER 390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . B_VECS 24 V
Collector Current Continuous at V_GE = 5V, T_C = +25. . . . . . . . . . . . . . . . . . . .  I_C25 18 A
Collector Current Continuous at V_GE = 5V, T_C = +100. . . . . . . . . . . . . . . . . . .I_C100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±10 V
Inductive Switching Current at L = 2.3mH, T_C = +25 . . . . . . . . . . . . . . . . . . . I_SCIS 17 A
Inductive Switching Current at L = 2.3mH, T_C = + 175 . . . . . . . . . . . . . . . . . .I_SCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, T_C = +25. . . . . . . . . . . E_AS 332 mJ
Power Dissipation Total at T_C = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 100 W
Power Dissipation Derating T_C > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . T_J, T_STG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV


Description

This HGT1S14N36G3VLS N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes of HGT1S14N36G3VLS provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.