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HGT1S14N36G3VL

Features: • Logic Level Gate Drive• Internal Voltage Clamp• ESD Gate Protection• TJ = 175• Ignition Energy CapablePinoutSpecificationsCollector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 390 VEmitter-Collector Bkdn Vol...

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SeekIC No. : 004362094 Detail

HGT1S14N36G3VL: Features: • Logic Level Gate Drive• Internal Voltage Clamp• ESD Gate Protection• TJ = 175• Ignition Energy CapablePinoutSpecificationsCollector-Emitter Bkdn Voltage at ...

HGT1S14N36G3VL Data Sheet

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Part Number:
HGT1S14N36G3VL
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175
• Ignition Energy Capable


Pinout

Connection Diagram


Specifications

Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER 390 V
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVECS 24 V
Collector Current Continuous at VGE = 5V, TC = +25. . . . . . . . . . . . . . . . . . . .  IC25 18 A
Collector Current Continuous at VGE = 5V, TC = +100. . . . . . . . . . . . . . . . . . .IC100 14 A
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±10 V
Inductive Switching Current at L = 2.3mH, TC = +25 . . . . . . . . . . . . . . . . . . . ISCIS 17 A
Inductive Switching Current at L = 2.3mH, TC = + 175 . . . . . . . . . . . . . . . . . .ISCIS 12 A
Collector to Emitter Avalanche Energy at L = 2.3mH, TC = +25. . . . . . . . . . . EAS 332 mJ
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W
Power Dissipation Derating TC > +25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.67 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . TJ, TSTG -40 to +175
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV


Description

This HGT1S14N36G3VL N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes of HGT1S14N36G3VL provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.




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