HGT1S10N120BNST, US $ 1.33-1.79 , Fairchild Semiconductor, HGT1S10N120BNST DataSheet download, circuit diagram from SeekIC.com

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HGT1S10N120BNST: IGBT Transistors N-Channel IGBT NPT Series 1200V

HGT1S10N120BNST Data Sheet

US $ 1.33~1.79 / Piece | Get Latest Price

Part Number:: HGT1S10N120BNST
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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0~1
1~25
25~100
100~250

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$1.79
$1.61
$1.47
$1.33

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Upload time: 2024/5/31

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Collector-Emitter Saturation Voltage :	2.7 V	Maximum Gate Emitter Voltage :	+/- 20 V
Continuous Collector Current at 25 C :	35 A	Gate-Emitter Leakage Current :	+/- 250 nA
Power Dissipation :	298 W	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-263AB-3	Packaging :	Reel

Description

Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Gate-Emitter Leakage Current : +/- 250 nA
Collector-Emitter Saturation Voltage : 2.7 V
Power Dissipation : 298 W
Continuous Collector Current at 25 C : 35 A
Package / Case : TO-263AB-3

Parameters:

Technical/Catalog Information	HGT1S10N120BNST
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	35A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGT1S10N120BNST HGT1S10N120BNST HGT1S10N120BNSTDKR ND HGT1S10N120BNSTDKRND HGT1S10N120BNSTDKR

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