Manufacturer: Vishay Semiconductors
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Diode Configuration: 1 Pair Common Cathode
Packaging: Bulk
Reverse Recovery Time (trr): 100ns
Series: HEXFRED®
Supplier Device Package: TO-249AA
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 80A
Current - Reverse Leakage @ Vr: 3µA @ 400V
Current - Average Rectified (Io) (per Diode): 89A (DC)
Package / Case: TO-249AA (Modified), D-60
Features: Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery ParametersSpecifications
|
|
Parameter |
Max. |
Units |
|
VR |
Cathode-to-Anode Voltage |
400 |
V |
|
IF @ TC = 25°C |
Continuous Forward Current |
89 |
A |
|
IF @ TC = 100°C |
Continuous Forward Current |
44 |
|
IFSM |
Single Pulse Forward Current |
300 |
|
IAS |
Maximum Single Pulse Avalanche Current ‚ |
5.0 |
|
EAS |
Non-Repetitive Avalanche Energy |
1.4 |
µJ |
|
PD @ TC = 25°C |
Maximum Power Dissipation |
160 |
W |
|
PD @ TC = 100°C |
Maximum Power Dissipation |
63 |
|
TJ |
Operating Junction and |
-55 to +150
|
°C |
|
TSTG |
Storage Temperature Range |
|
|
Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) |
DescriptionHEXFREDTM HFA80NK40C diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA80NK40C devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
HFA80NK40C Data Sheet
