Features: * Fast Recovery Time Characteristic* Electrically Isolated Base Plate* Large Creepage Distance Between Terminal* Simplified Mechanical Designs, Rapid AssemblySpecifications Parameters Max Units VR Cathode-to-Anode Voltage 1200 V IF Continuous Forward Cu...
HFA80FA120: Features: * Fast Recovery Time Characteristic* Electrically Isolated Base Plate* Large Creepage Distance Between Terminal* Simplified Mechanical Designs, Rapid AssemblySpecifications Parame...
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Features: • Fast recovery time characteristic• Electrically isolated base plate•...
Parameters |
Max |
Units | |
VR |
Cathode-to-Anode Voltage |
1200 |
V |
IF |
Continuous Forward Current, TC = 60°C Per Leg |
40 |
A |
IFSM |
Single Pulse Forward Current, TJ = 25°C Per Leg |
400 | |
IFRM |
Maximum Repetitive Forward Current, Rated VR, Square wave, 20KHz, TC = 60°C |
72 | |
PD |
Max Power Dissipation, TC = 100°C |
71 |
W |
Max Power Dissipation, TC = 25°C |
178 | ||
VISOL |
RMS Isolation Voltage, Any Terminal to Case, t = 1 min |
2500 |
V |
TJ,TSTG |
Operating Junction and Storage Temperatures |
- 55 to 150 |
°C |
The dual diode series configuration (HFA80FA120) is used for output rectification or frewheeling/ clamping operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These HFA80FA120 modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.