HFA80NC40CSM

Manufacturer: Vishay Semiconductors
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max): 400V
Series: HEXFRED®
Mounting Type: Through Hole, Radial
Packaging: Bulk
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 3µA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 80A
Current - Average Rectified (Io) (per Diode): 85A (DC)
Package / Case: D-61-8-SM
Supplier Device Package: D-61-8-SM


Features:

• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters


Specifications

	Parameter	Max.	Units
VR	Cathode-to-Anode Voltage	400	V
IF @ TC = 25°C	Continuous Forward Current	85	A
IF @ TC = 100°C	Continuous Forward Current	42
IFSM	Single Pulse Forward Current 	300
EAS	Non-Repetitive Avalanche Energy	1.4	µJ
PD @ TC = 25°C	Maximum Power Dissipation	150	W
PD @ TC = 100°C	Maximum Power Dissipation	59
TJ	Operating Junction and	-55 to +150	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Description

HFA80NC40CSM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current , temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA80NC40CSM devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.