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HFA75MB40C_1137091

Features: · Reduced RFI and EMI· Reduced Snubbing· Extensive Characterization of Recovery ParametersSpecifications Parameter Max. Units VR Cathode-to-Anode Voltage 400 V IF @ TC = 25°C Continuous Forward Current 75 A IF @ TC = 100°C Continuous Forward Current 36 IFS...

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HFA75MB40C_1137091: Features: · Reduced RFI and EMI· Reduced Snubbing· Extensive Characterization of Recovery ParametersSpecifications Parameter Max. Units VR Cathode-to-Anode Voltage 400 V IF @ TC ...

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HFA75MB40C_1137091
Supply Ability:
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Upload time: 2024/5/19

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Product Details

Description



Features:

·  Reduced RFI and EMI
·  Reduced Snubbing
·  Extensive Characterization of Recovery Parameters


Specifications

  Parameter Max. Units
VR Cathode-to-Anode Voltage 400 V
IF @ TC = 25°C Continuous Forward Current 75 A
IF @ TC = 100°C Continuous Forward Current 36
IFSM Single Pulse Forward Current 300
IAS Maximum Single Pulse Avalanche Current 5.0
EAS Non-Repetitive Avalanche Energy 1.4 mJ
PD @ TC = 25°C Maximum Power Dissipation 125 W
PD @ TC = 100°C Maximum Power Dissipation 50
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to +150
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)



Description

HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency ower conditioning systems.  An extensive characterization of the recovery ehavior for different values of current, temperature and di/dt simplifies the alculations of losses in the operating conditions.  The softness of the recovery liminates the need for a snubber in most applications.  These devices are deally suited for power converters, motors drives and other applications where witching losses are significant portion of the total losses.




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