HFA70NC60C

Manufacturer: Vishay Semiconductors
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Series: HEXFRED®
Voltage - DC Reverse (Vr) (Max): 600V
Current - Reverse Leakage @ Vr: 10µA @ 600V
Mounting Type: Chassis Mount
Package / Case: D-61-8
Supplier Device Package: D-61-8
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 35A
Current - Average Rectified (Io) (per Diode): 56A (DC)
Reverse Recovery Time (trr): 110ns


Features:

• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
   Recovery Parameters


Specifications

	Parameter	Max.	Units
VR	Cathode-to-Anode Voltage	600	V
IF @ TC = 25°C	Continuous Forward Current	56	A
IF @ TC = 100°C	Continuous Forward Current	27
IFSM	Single Pulse Forward Current 	200
EAS	Non-Repetitive Avalanche Energy	220	µJ
PD @ TC = 25°C	Maximum Power Dissipation	150	W
PD @ TC = 100°C	Maximum Power Dissipation	59
TJ	Operating Junction and	-55 to +150	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)

Description

HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.