HFA70NH60

Manufacturer: Vishay Semiconductors
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 600V
Packaging: Bulk
Diode Configuration: Single
Reverse Recovery Time (trr): 120ns
Series: HEXFRED®
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Current - Average Rectified (Io) (per Diode): 70A
Current - Reverse Leakage @ Vr: 20µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 70A


Description

The HFA70NH60 HEXFRED TM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems.  An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions.  The softness of the recovery eliminates the need for a snubber in most applications.  These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.

Features of the HFA70NH60 are:(1)Reduced RFI and EMI; (2)Reduced Snubbing; (3)Extensive Characterization of Recovery Parameters.

The absolute maximum ratings of the HFA70NH60 can be summarized as:(1)VR Cathode-to-Anode Voltage :600 V; (2)IF @ TC = 25°C Continuous Forward Current :126A; (3)IF @ TC = 100°C Continuous Forward Current :63A; (4)IFSM Single Pulse Forward Current : 400A; (5)EAS Non-Repetitive Avalanche Energy : 220 J; (6)PD @ TC = 25°C Maximum Power Dissipation: 310W; (7)PD @ TC = 100°C Maximum Power Dissipation: 125W; (8)TJ Operating Junction and TSTG Storage Temperature Range:-55 to +150°C.

If you want to know more information such as the electrical characteristics about HFA70NH60,please download the datasheet in www.seekdatasheet.com .