HE9013-I

The HE9013-I belongs to the HE9013 series. It is a kind of NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. HE9013-I is available in the TO-92 package. It can be used in 1 W output amplifier of portable radios in class B push-pull operation.

There are some features of HE9013-I as follows. (1) high total power dissipation; (2) high collector current; (3) complementary to HE9012; (4) excellent lnearity.

The following is the description about HE9013-I's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(VCBO) is 40 V and collector to emitter voltage(VCEO) is 20 V,emitter to base voltage(VEBO) is 5 V; (4): IC collector current is 500 mA and IB base current is 100 mA; (5): the minimum BVCBO is 40 V when IC is 100 A and IE is 0; (6): the minimum BVCEO is 20 V when IC is 1 mA and IB is 0,the minimum BVEBO is 5 V when IE is 100 A and IC is 0; (7): the maximum IEBO is 100 nA when VEB is 3 V and IC is 0,the ICBO is 100 nA at VCE is 25 V and IE is 0; (8): the maximum VCE(sat) is 0.6 V at the condition of IC is 500 mA and IB is 50 mA; (9): the minimum fT is 100 MHz when VCE is 1 V,IC is 10 mA and f is 100 MHz.If you want to know more information about the HE9013-I,please download the datasheet at www.seekic.com.