HE9012-F

The HE9012-F belongs to the HE9012 series. It is a kind of NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. HE9012-F is available in the TO-92 package. It can be used in 1 W output amplifier of portable radios in class B push-pull operation.

There are some features of HE9012-F as follows. (1) high total power dissipation; (2) high collector current; (3) complementary to HE9013; (4) excellent lnearity.

The following is the description about HE9012-F's absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(VCBO) is -40 V and collector to emitter voltage(VCEO) is -20 V,emitter to base voltage(VEBO) is -5 V; (4): IC collector current is -500 mA and IB base current is -100 mA; (5): the minimum BVCBO is -40 V when IC is -100 A and IE is 0; (6): the minimum BVCEO is -20 V when IC is -1 mA and IB is 0,the minimum BVEBO is -5 V when IE is -100 A and IC is 0; (7): the maximum IEBO is -100 nA when VEB is -3 V and IC is 0,the ICBO is -100 nA at VCE is -25 V and IE is 0; (8): the maximum VCE(sat) is -0.6 V at the condition of IC is -500 mA and IB is -50 mA; (9): the minimum fT is 100 MHz when VCE is -1 V,IC is -10 mA and f is 100 MHz.If you want to know more information about the HE9012-F,please download the datasheet at www.seekic.com.