HE8812SG

Features: • High efficiency and high output powerSpecifications Item Symbol Value Unit Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 to +60 °C Storage temperature Tstg 40 to +90 °CDescriptionThe HE8812SG is a GaAlAs double hete...

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SeekIC No. : 004361244 Detail

HE8812SG: Features: • High efficiency and high output powerSpecifications Item Symbol Value Unit Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 t...

floor Price/Ceiling Price

Part Number:
HE8812SG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/22

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Product Details

Description



Features:

• High efficiency and high output power


Specifications

Item Symbol Value Unit
Forward current IF 250 mA
Reverse voltage VR 3 V
Operating temperature Topr 20 to +60 °C
Storage temperature Tstg 40 to +90 °C



Description

The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. HE8812SG is suitable for use as the light source in a wide range of optical control and sensing equipment.


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