Features: · High-frequency response· High efficiency and high output power· Broad radiation patternSpecifications Item Symbol Rated Value Units Forward current IF 200 mA Reverse voltage VR 3 V Operating temperature Topr 20 to +60 Storage temperature Tstg 40 to +90 ...
HE8811: Features: · High-frequency response· High efficiency and high output power· Broad radiation patternSpecifications Item Symbol Rated Value Units Forward current IF 200 mA Reverse vol...
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Item | Symbol | Rated Value | Units |
Forward current | IF | 200 | mA |
Reverse voltage | VR | 3 | V |
Operating temperature | Topr | 20 to +60 | |
Storage temperature | Tstg | 40 to +90 |
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. HE8811 is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.