HE8050S-E

The HE8050S-E belongs to the HE8050S series. It is a kind of NPN epitaxial planar transistor which is made by the MICROELECTRONICS CORP and is designed for general purpose amplifier applications. It is available in the TO-92 package.

The following is the description about its absolute maximum ratings of HE8050S-E at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 625 mW when TA is 25 ; (3): collector to base voltage(VCBO) is 25 V and collector to emitter voltage(VCEO) is 20 V,emitter to base voltage(VEBO) is 5 V; (4): IC collector current is 700 mA; (5): the minimum BVCBO is 25 V when IC is 10 A; (6): the minimum BVCEO is 20 V when IC is 1 mA and,the minimum BVEBO is 5 V when IE is 10 A ; (7): the maximum IEBO is 100 nA when VEB is 6 V,the ICBO is 1 A at VCB is 20 V; (8): the maximum VCE(sat) is 0.5 V,at the condition of IC is 0.5 A and IB is 50 mA; (9): the minimum fT is 150 MHz when VCE is 10 V,IC is 20 mA and f is 100 MHz.

If you want to know more information about the HE8050S-E,please download the datasheet at www.seekic.com.